Abstract:
The whole world is replacing high energy consumption conventional light sources with low energy consumption light emitting diodes because LEDs are more economical and easy to fabricate, low energy consumption, hazardless and highly friendly to the environment. ZnO is one of the most promising wide band gap semiconductor compounds due to a unique combination of properties which renders it ideal for optoelectronic applications especially for the LEDs. A low temperature solution based technique was utilized for the fabrication of onedimensional (1D) nanostructures of n-ZnO semiconductor material on a substrate containing thin film of p-doped semiconductor material. Scanning electron microscope, X-rays powder diffraction, Fourier transforms and UV-Vis spectroscopies as well as photoluminescence measurements were performed to investigate the diverse characteristics of synthesized 1D nanostructure which further processed for the fabrication of light emitting nanodevices (LEDs). Finally, the fabricated nanodevice was further investigated through the electroluminescence measurements to look the emission spectra and the quality of the light. The combination of the design of LED based on merely solid state materials and nanoscale materials grown at nearly room temperature holds the capabilities to produce the lighting devices at much lower cost compared to conventional LEDs available in the market and this design could pave the way to fabricate the new lighting solid state sources.
