Abstract:
Materials which have the value of real part of dielectric constant ε' >103 are known as
Colossal dielectric constant materials. They have vast applications in microelectronics,
compact and high energy storage devices. This research work is employed to use Zinc
Oxide as Colossal dielectric constant material. To tailor its dielectric properties the
material is co doped with Erbium and copper, Erbium acts as a donor and copper as an
acceptor in ZnO. From XRD results it has been proved that both Erbium and copper are
successfully doped in ZnO with 0.25, 0.5, 0.75 and 1%M doping concentrations. Band
gap analysis of all the samples is done using UV visible Diffuse Reflectance
Spectroscopy. After a successful insight about the substitutional doping in ZnO through
XRD, the samples are analyzed through Impedance spectroscopy. Impedance analysis of
the samples confirmed the colossal permittivity in ZnO which increases with an increase
in doping concentration. 1% co-doped ZnO sample has a maximum value of dielectric
constant. It is observed that the value of real part of dielectric constant decreased with an
increase in frequency while ac conductivity increased with an increase in frequency.
