Transparent Zinc Oxide films obtained by Thermal Annealing Of Mirco oxidized sputtered Zinc Ntride films

Abstract

DC magnetron sputtering phenomenon comprising of the gases named as Nitrogen and Argon with the assistance of Zinc utilized as a target material was used to deposit films of ZnN.The process of micro annealing was maneouvred on these fims in H2O2 solution at room temperature and then annealed in air in temperature range 100oC-200oC. XRD, Raman spectroscopy, Photoluminescence and Spectrophotometry were employed to study the changes upon structural, vibrational along optical characteristics of micro-oxidized ZnN films with annealing temperature. X-ray diffraction (XRD) research reveals the fact of as deposited ZnN films exhibiting polycrystalline cubic anti-bixbyite structure and transformed to wurtzite ZnO with increase in annealing temperature. Raman analysis reveals the existence of E2 (high) mode and disappearance of nitrogen related peaks in annealed films. Photoluminescence spectra exhibit no emission peak for as deposited films, but as the annealing temperature increased two emission peaks relevant to Zn defects and acceptor donar recombination are observed. Optical transmittance increased and absorption edge shift towards UV region as annealing temperature increased. The optical band gap has been calculated from transmittance spectra, which enhances from 2.86ev to 3.36ev.