Abstract:
Zinc oxide is widely under exploration for its application in solar cell as front transparent
conducting oxide (TCO) to enhance the efficiency of a solar cell by increasing the light
absorption capability. It offers good electrical mobility and conductivity, high transparency; high
absorption coefficient, textured surface, better short current density/ increased photocurrent,
conversion efficiency and high fill factor competitive to other commercially used TCOs such as
Indium doped Tin oxide, SnO2. Along with these improvement factors this abundant material
also reduces the cost of fabrication. Theoretical studies have been carried out comprehensively in
terms of structure, properties and current state of art fabrication methods for about a century. A
variety of techniques e.g Thermal/ plasama/E-Beam evaporation, solution based, sputtering and
CVD have been used to fabricate ZnO. Numerous approaches have been employed all over the
world to further boost its electrical and optical properties.
Doping is often used to enhance the transparency and electrical transport features. ZnO doped
with Al, In, Ga, F, H ,Sn, N and Cu has been studied to analyze the effects of dopant on
structure, conductivity, mobility, resistance, band gap and optical transmittance.
In this work/, ZnO is fabricated based on available local resources to achieve all these
improvement factors. This grown layer is then characterized with Xray diffraction , atomic force
microscopy, Scanning electron microscopy, Hall effect and spectrophotometry.
