Improved Conversion Efficiency and Frequency Robustness for 115VAC, 400HZ TO 5VDC SMPS - A Simulation Based Comparative Analysis

Abstract

This thesis investigates the performance of silicon-based and silicon carbide (SiC)- based Metal-Oxide-Semiconductor Field-Effect transistors (MOSFETs) in a 115VAC to 5VDC converter. The study reveals that SiC-based MOSFETs outperform their silicon counterparts in terms of efficiency and energy conservation, with an efficiency range of 98.25% to 91.11% compared to 92.92% to 82.42% for silicon-based MOSFETs. Furthermore, SiC-based MOSFETs maintain superior efficiency and lower losses at frequencies between 40 kHz and 100 kHz, and exhibit less energy loss despite a larger power input at all frequencies.