Abstract:
Ferroelectric and multiferroic materials, particularly in the realm of two-dimensional (2D)
materials, have gained significant interest for their potential applications in future data
storage technologies. This thesis presents a comprehensive exploration, encompassing an
extensive literature review on ferroelectricity, multiferroics, and 2D materials, along with
decoding characterization techniques and synthesis approaches for MXenes. The study
focuses on unveiling the frequency-dependent ferroelectric properties of 2D Ti3C2Tx
MXene film at room-temperature. Through electric polarization vs electric field (P-E)
measurements at varying frequencies and under static magnetic field, the research
demonstrates a clear frequency and dependence of electric domains and magnetic field
control of electric polarization, affirming the presence of magneto-electric (ME) effect.
Additionally, the thesis highlights the synthesis of double transition metal (DTM) carbide
MXene film with enhanced ferroelectricity and induced multiferroicity. Ferroelectric and
magnetic hysteresis loops, along with magnetoelectric effect analyses, further underscore
the co-existence of ferroelectric and multiferroics in DTM MXene film, opening avenues
for electronic device applications. Furthermore, the investigation delves into the utilization
of ferroelectric Ti3C2Tx and Nb2CTx MXene film in resistive data storage devices,
showcasing stable switching behavior and enhanced on/off ratio compared to nonferroelectric
counterparts. This underscores the potential of 2D ferroelectric materials in
advancing data storage technologies. The study concludes with the discussion of
significance of resistive random-access memory (RRAM) devices as promising
alternatives to silicon-based flash memory, emphasizing the potential of 2D materials i.e.,
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MXenes in overcoming existing challenges in data storage technology. Future
recommendations focus on further exploration of ferroelectricity and multiferroicity in
MXenes to propel advancements in next-generation electronics.
In essence, this study lays a solid foundation for the advancement of MXene-based
electronics, offering a pathway towards realizing high-performance, multifunctional data
storage devices for the future.
