Abstract:
Double Heterojunction Bipolar Transistor (DHBT) is one of the promising fields of modern era
of semiconductor industry. InAlAs-InGaAs-InAlAs DHBT is simulated in Synopsys TCAD.
Device structure is designed in Sentaurus Device Editor (SDE). The emitter device area is taken
as 1×5 µm
2
. The common emitter current voltage (IV) characterization of device is studied at
different temperatures from 300k to 400K with fixed base current ranging from 10 to 200 μA
with step size of 10 μA. For this purpose thermionic and thermodynamic transport models were
incorporated. The breakdown voltage decreases from 6.5 to 6V, while device gain increases from
40 to 45 with an increase in the temperature from 300 to 400K, respectively.
Proposed structure works well for the high frequency edge of microwave band (100GHz) which
can be used for various applications such as push-pull amplifiers. An effect of the SETBACK
layer (InGaAs) thickness on the break down voltage was studied. Effects of the SPACER and
SETBACK layers on the break down voltages of BE and BC junctions were also reported.
Hydro- and thermo-dynamic transport models along with the drift diffusion models were
successfully used to understand the Physics of device.
