Metal/NiO/Metal-based Memristors: Exploring the Influence of Reduced-Graphene Oxide and Carbonitride MXene Electrodes in Data Storage Devices

Abstract

The advancement of technology demands new ways of modifying the currently existing scientific procedure, manufacturing techniques, and the specific materials used for purposes. This study follows the innovation in the presently existing schemes of materials used for memristor fabrication by incorporating 2D materials as electrodes in the memristors. It discusses the fabrication and performance of NiO based memristors with Laser-reduced Graphene Oxide(L-rGO) and Titanium Carbonitride MXene (Ti3CNTx) free-standing films as electrode materials. By exploiting the distinctive properties of NiO, L-rGO, and Ti3CNTx, three device architectures are manufactured and tested for memristor behaviour which includes Device I (L-rGO/NiO/L-rGO), Device II (Ti₃CNTₓ/NiO/Ti₃CNTₓ) and Device III with asymmetric electrodes (Ti₃CNTₓ/NiO/L-rGO). The synthesis methods are optimized for L rGO, Ti₃CNTₓ MXene, and NiO to obtain high purity and structural stability. To confirm the successful preparation of materials, structural, morphological and optical characterizations are performed while I-V measurements demonstrated stable and reproducible resistive switching in all devices. Among all the devices, Device III with asymmetric electrodes (Ti₃CNTₓ/NiO/L rGO) exhibited superior performance, including enhanced endurance and excellent stability. This study highlights the potential of integrating L-rGO and MXene with NiO to design high performance, flexible, and scalable memristors for next-generation data storage devices.