Zinc Oxide (ZnO) & Niobium Diselenide (NbSe2) Nanostructures for Sensing and EMI Shielding Applications

Abstract

In this research project, growth of vertically aligned ZnO Nanorods arrays using Zinc Nitrate hexahydrate and Hexamethylene Tetramine (HMTA), by Chemical Bath Deposition on Silicon Wafer was investigated. The growth is conducted under influence amine based enhancers including Ethane-1,2-diamine, DiethylAmine and MonoEthanolamine. The effect of enhancer was studied and evaluated based on three different ratios (1:0.5, 1:1, 1:1.5) of enhancer to the precursor (Zinc Nitrate and HMTA). The effect different ratios of enhancers on morphology aspect ratio and crystallinity of the as grown Nanorods were studied under Scanning electron microscope (SEM), X-ray powder diffraction (XRD) and UV VIS Spectroscopy. Electrical Properties such as current–voltage characteristics were investigated, its correlation to the morphology and aspect ratio of the Nanorods in the presence of 100µL-500µL of Aromatic Compound Cyclohexane and at different applied voltages. The effect of morphologies on dye degradation (Methylene blue dye) was also investigated. The dye degradation was investigated in UV lamps in photo degradation chamber, and was monitored at 10 minutes’ interval using the plots of UV Vis, and decrease in absorbance was observed. Liquid phase Exfoliation of NbSe2 was also achieved along with exfoliation of Semiconducting WS2, Exfoliation was done for 48h using 0.3cycle and 40% amplitude. Exfoliated NbSe2 was centrifuged for 45min at different speeds i.e. 1500rpm, 1000rpm and 500rpm to separate out the nanoflakes on basis of their size and densities. The prepared Samples were characterized by X-ray powder diffraction (XRD) and UV VIS Spectroscopy. The characteristics of these two were evaluated as potential filler material in composites for EMI Shielding using Vector Network Analyzer, NbSe2 showed great potential in EMI shielding (>30 SE – Shielding effectiveness.